2
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2000 V
Machine Model (per EIA/JESD22--A115)
A, passes 125 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics
(TA
=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
10
μAdc
Drain--Source Breakdown Voltage
(ID
= 300 mA, VGS
=0Vdc)
V(BR)DSS
110
?
?
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS
=50Vdc,VGS
=0Vdc)
IDSS
?
?
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 100 Vdc, VGS
=0Vdc)
IDSS
?
?
5
mA
On Characteristics
Gate Threshold Voltage
(1)
(VDS
=10Vdc,ID
= 1600
μAdc)
VGS(th)
1
1.63
3
Vdc
Gate Quiescent Voltage
(2)
(VDD
=50Vdc,ID
= 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage
(1)
(VGS
=10Vdc,ID
=4Adc)
VDS(on)
?
0.28
?
Vdc
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
3.3
?
pF
Output Capacitance
(VDS
=50Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Coss
?
147
?
pF
Input Capacitance
(VDS
=50Vdc,VGS
=0Vdc±
30 mV(rms)ac @ 1 MHz)
Ciss
?
506
?
pF
Functional Tests
(2,3)
(In Freescale Test Fixture, 50 ohm system) VDD
=50Vdc,IDQ
= 150 mA, Pout
= 1000 W Peak (200 W Avg.), f = 130
MHz, 100
μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
24
26
28
dB
Drain Efficiency
ηD
69
71
?
%
Input Return Loss
IRL
?
-- 1 6
-- 9
dB
1. Each side of device measured separately.
2. Measurements made with device in push--pull configuration.
3. Measurements made with device in straight lead
configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
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